1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. UN Semiconductor
  6. UN200P32T

UN200P32T

Download Datasheet Request Quote

Note : Your request will be directed to UN Semiconductor.

The UN200P32T from UN Semiconductor is a MOSFET with Continous Drain Current -1.2 A, Drain Source Resistance 80 to 140 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for UN200P32T can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    UN200P32T
  • Manufacturer
    UN Semiconductor
  • Description
    -20 V, -1.2 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.2 A
  • Drain Source Resistance
    80 to 140 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Gate Charge
    4.9 nC
  • Switching Speed
    6 to 29 ns
  • Power Dissipation
    0.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 250 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products