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UN200P88DE

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The UN200P88DE from UN Semiconductor is a MOSFET with Continous Drain Current -0.98 A, Drain Source Resistance 370 to 775 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.35 to -1.1 V. Tags: Surface Mount. More details for UN200P88DE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN200P88DE
  • Manufacturer
    UN Semiconductor
  • Description
    -20 V, -0.98 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.98 A
  • Drain Source Resistance
    370 to 775 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.35 to -1.1 V
  • Gate Charge
    1.24 nC
  • Switching Speed
    5.7 to 32.6 ns
  • Power Dissipation
    -0.71 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN1006-3L
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 113 pF

Technical Documents
View details on the manufacturer's website
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