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UN201P26T

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The UN201P26T from UN Semiconductor is a MOSFET with Continous Drain Current -3.5 A, Drain Source Resistance 26 to 50 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.45 to -0.9 V. Tags: Surface Mount. More details for UN201P26T can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN201P26T
  • Manufacturer
    UN Semiconductor
  • Description
    -20 V, -3.5 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.5 A
  • Drain Source Resistance
    26 to 50 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.45 to -0.9 V
  • Gate Charge
    16.7 nC
  • Switching Speed
    20 to 62 ns
  • Power Dissipation
    1.56 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 1180 pF

Technical Documents
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