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UN201P26TE

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The UN201P26TE from UN Semiconductor is a MOSFET with Continous Drain Current -5.0 A, Drain Source Resistance 28 to 55 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for UN201P26TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN201P26TE
  • Manufacturer
    UN Semiconductor
  • Description
    -20 V, -5.0 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.0 A
  • Drain Source Resistance
    28 to 55 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Gate Charge
    17.2 nC
  • Switching Speed
    9.5 to 94 ns
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 1450 pF

Technical Documents
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