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UN300DP26T

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The UN300DP26T from UN Semiconductor is a MOSFET with Continous Drain Current -4.8 A, Drain Source Resistance 27 to 54 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -2.5 V. Tags: Surface Mount. More details for UN300DP26T can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN300DP26T
  • Manufacturer
    UN Semiconductor
  • Description
    -30 V, -4.8 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.8 A
  • Drain Source Resistance
    27 to 54 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -2.5 V
  • Gate Charge
    16 nC
  • Switching Speed
    5 to 17 ns
  • Power Dissipation
    1.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    Motor/Body Load Control, Load Switch, DC-DC Converters
  • Note
    Input Capacitance :- 760 pF

Technical Documents
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