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UN300P88DE

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The UN300P88DE from UN Semiconductor is a MOSFET with Continous Drain Current -1.0 A, Drain Source Resistance 0.45 to 0.9 ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -0.5 to -1.5 V. Tags: Surface Mount. More details for UN300P88DE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN300P88DE
  • Manufacturer
    UN Semiconductor
  • Description
    -30 V, -1.0 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.0 A
  • Drain Source Resistance
    0.45 to 0.9 ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -0.5 to -1.5 V
  • Gate Charge
    0.36 nC
  • Switching Speed
    28 to 74 ns
  • Power Dissipation
    0.89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN1006-3L
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 19 pF

Technical Documents
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