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UN400N26T

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The UN400N26T from UN Semiconductor is a MOSFET with Continous Drain Current 8.0 A, Drain Source Resistance 18 to 30 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for UN400N26T can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN400N26T
  • Manufacturer
    UN Semiconductor
  • Description
    40 V, 8.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.0 A
  • Drain Source Resistance
    18 to 30 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    9.8 nC
  • Switching Speed
    2.8 to 40.4 ns
  • Power Dissipation
    1.38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 1013 pF

Technical Documents
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