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UN500P32TE

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The UN500P32TE from UN Semiconductor is a MOSFET with Continous Drain Current -0.15 A, Drain Source Resistance 2.5 to 5.6 ohm, Drain Source Breakdown Voltage -50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -0.9 to -2.0 V. Tags: Surface Mount. More details for UN500P32TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN500P32TE
  • Manufacturer
    UN Semiconductor
  • Description
    -50 V, -0.15 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.15 A
  • Drain Source Resistance
    2.5 to 5.6 ohm
  • Drain Source Breakdown Voltage
    -50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -0.9 to -2.0 V
  • Gate Charge
    0.9 to 1.7 nC
  • Switching Speed
    0.7 to 12 ns
  • Power Dissipation
    0.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 22 pF

Technical Documents
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