QM2401K

Note : Your request will be directed to uPI Semiconductor.

The QM2401K from uPI Semiconductor is a MOSFET with Continous Drain Current -3.1 to -3.9 A, Drain Source Resistance 50 to 90 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.5 to -1.2 V. Tags: Surface Mount. More details for QM2401K can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM2401K
  • Manufacturer
    uPI Semiconductor
  • Description
    -20 V, -3.1 to -3.9 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.1 to -3.9 A
  • Drain Source Resistance
    50 to 90 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.5 to -1.2 V
  • Gate Charge
    10.2 to 14.3 nC
  • Switching Speed
    5.6 to 67 ns
  • Power Dissipation
    1.32 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch
  • Note
    Input Capacitance :- 1200 pF

Technical Documents

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