QM2421M3

Note : Your request will be directed to uPI Semiconductor.

The QM2421M3 from uPI Semiconductor is a MOSFET with Continous Drain Current -4.9 to -24 A, Drain Source Resistance 25 to 45 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.5 to -1.2 V. Tags: Surface Mount. More details for QM2421M3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    QM2421M3
  • Manufacturer
    uPI Semiconductor
  • Description
    -20 V, -4.9 to -24 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.9 to -24 A
  • Drain Source Resistance
    25 to 45 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.5 to -1.2 V
  • Gate Charge
    17.2 to 24 nC
  • Switching Speed
    2 to 53 ns
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PRPAK3x3
  • Note
    Input Capacitance :- 2016 pF

Technical Documents

Latest MOSFETs

View more products