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QM2422M3

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The QM2422M3 from uPI Semiconductor is a MOSFET with Continous Drain Current 12.8 to 80 A, Drain Source Resistance 2.1 to 5.8 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for QM2422M3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM2422M3
  • Manufacturer
    uPI Semiconductor
  • Description
    20 V, 12.8 to 80 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12.8 to 80 A
  • Drain Source Resistance
    2.1 to 5.8 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.2 V
  • Gate Charge
    92 nC
  • Switching Speed
    11.2 to 130 ns
  • Power Dissipation
    43.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PRPAK3x3
  • Applications
    High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch
  • Note
    Input Capacitance :- 5207 pF

Technical Documents
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