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QM3015D

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The QM3015D from uPI Semiconductor is a MOSFET with Continous Drain Current -9 to -17.8 A, Drain Source Resistance 8 to 18.5 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1.0 to -2.5 V. Tags: Surface Mount. More details for QM3015D can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM3015D
  • Manufacturer
    uPI Semiconductor
  • Description
    -30 V, -9 to -17.8 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9 to -17.8 A
  • Drain Source Resistance
    8 to 18.5 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1.0 to -2.5 V
  • Gate Charge
    33 nC
  • Switching Speed
    8 to 78.4 ns
  • Power Dissipation
    52.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252
  • Applications
    High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch
  • Note
    Input Capacitance :- 3448 pF

Technical Documents
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