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QM3015S

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The QM3015S from uPI Semiconductor is a MOSFET with Continous Drain Current -8 to -10 A, Drain Source Resistance 8 to 18.5 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for QM3015S can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM3015S
  • Manufacturer
    uPI Semiconductor
  • Description
    -30 V, -8 to -10 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8 to -10 A
  • Drain Source Resistance
    8 to 18.5 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    30 to 42 nC
  • Switching Speed
    9.4 to 234 ns
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP8
  • Applications
    High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch
  • Note
    Input Capacitance :- 4827 pF

Technical Documents
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