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QM3016P

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The QM3016P from uPI Semiconductor is a MOSFET with Continous Drain Current 14 to 110 A, Drain Source Resistance 3.4 to 6 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Through Hole. More details for QM3016P can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM3016P
  • Manufacturer
    uPI Semiconductor
  • Description
    30 V, 14 to 110 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 to 110 A
  • Drain Source Resistance
    3.4 to 6 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    31.6 nC
  • Switching Speed
    7.8 to 49 ns
  • Power Dissipation
    86.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220
  • Applications
    High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch
  • Note
    Input Capacitance :- 3075 pF

Technical Documents
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