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QM3126M3

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The QM3126M3 from uPI Semiconductor is a MOSFET with Continous Drain Current 7.7 to 32 A, Drain Source Resistance 12 to 21 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for QM3126M3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM3126M3
  • Manufacturer
    uPI Semiconductor
  • Description
    30 V, 7.7 to 32 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.7 to 32 A
  • Drain Source Resistance
    12 to 21 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    10.2 nC
  • Switching Speed
    5.4 to 43.8 ns
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PRPAK3X3
  • Applications
    High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch
  • Note
    Input Capacitance :- 450 pF

Technical Documents
View details on the manufacturer's website
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