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QN3001M3E

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The QN3001M3E from uPI Semiconductor is a MOSFET with Continous Drain Current 17 to 137 A, Drain Source Resistance 1.8 to 3.4 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for QN3001M3E can be seen below.

Product Specifications

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Product Details

  • Part Number
    QN3001M3E
  • Manufacturer
    uPI Semiconductor
  • Description
    30 V, 17 to 137 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17 to 137 A
  • Drain Source Resistance
    1.8 to 3.4 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    84.3 nC
  • Switching Speed
    10.2 to 84.6 ns
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PRPAK3X3
  • Applications
    Lithium-ion battery charging and discharging switch, Load Switch, DC-DC Convertor
  • Note
    Input Capacitance :- 2959 pF

Technical Documents
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