1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. uPI Semiconductor
  6. QN3106M6N

QN3106M6N

Download Datasheet Request Quote

Note : Your request will be directed to uPI Semiconductor.

The QN3106M6N from uPI Semiconductor is a MOSFET with Continous Drain Current 14 to 90 A, Drain Source Resistance 3.0 to 5.9 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for QN3106M6N can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    QN3106M6N
  • Manufacturer
    uPI Semiconductor
  • Description
    30 V, 14 to 90 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 to 90 A
  • Drain Source Resistance
    3.0 to 5.9 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    19.9 nC
  • Switching Speed
    8.9 to 44.7 ns
  • Power Dissipation
    48 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PRPAK5X6
  • Applications
    High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch
  • Note
    Input Capacitance :- 1146 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products