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IRF610

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IRF610 Image

The IRF610 from Vishay is a MOSFET with Continous Drain Current 2.1 to 3.3 A, Drain Source Resistance 1.5 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRF610 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF610
  • Manufacturer
    Vishay
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.1 to 3.3 A
  • Drain Source Resistance
    1.5 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    8.2 nC
  • Power Dissipation
    36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
View details on the manufacturer's website
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