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IRFB18N50K

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IRFB18N50K Image

The IRFB18N50K from Vishay is a MOSFET with Continous Drain Current 17 A, Drain Source Resistance 290 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for IRFB18N50K can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFB18N50K
  • Manufacturer
    Vishay
  • Description
    500 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17 A
  • Drain Source Resistance
    290 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    120 nC
  • Power Dissipation
    220 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switch mode power supply (SMPS), Uninterruptible power supply, High speed power switching, Hard switched and high frequency circuits

Technical Documents
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