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IRFB9N65A

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IRFB9N65A Image

The IRFB9N65A from Vishay is a MOSFET with Continous Drain Current 8.5 A, Drain Source Resistance 930 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFB9N65A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFB9N65A
  • Manufacturer
    Vishay
  • Description
    650 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.5 A
  • Drain Source Resistance
    930 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    48 nC
  • Power Dissipation
    167 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Switch mode power supply (SMPS), Uninterruptible power supply, High speed power switching

Technical Documents
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