1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. IRFBG30

IRFBG30

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

IRFBG30 Image

The IRFBG30 from Vishay is a MOSFET with Continous Drain Current 3.1 A, Drain Source Resistance 5000 milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFBG30 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRFBG30
  • Manufacturer
    Vishay
  • Description
    1000 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.1 A
  • Drain Source Resistance
    5000 milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    80 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products