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IRFD123

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IRFD123 Image

The IRFD123 from Vishay is a MOSFET with Continous Drain Current 1.3 A, Drain Source Resistance 270 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFD123 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFD123
  • Manufacturer
    Vishay
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.3 A
  • Drain Source Resistance
    270 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    16 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 175 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    HVMDIP

Technical Documents
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