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IRFIB6N60A

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IRFIB6N60A Image

The IRFIB6N60A from Vishay is a MOSFET with Continous Drain Current 5.5 A, Drain Source Resistance 750 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFIB6N60A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFIB6N60A
  • Manufacturer
    Vishay
  • Description
    600 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.5 A
  • Drain Source Resistance
    750 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    49 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220 FULLPAK
  • Applications
    Switch mode power supply (SMPS), Uninterruptible power supply, High speed power switching

Technical Documents
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