IRFIBE20G

Note : Your request will be directed to Vishay.

IRFIBE20G Image

The IRFIBE20G from Vishay is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 650 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFIBE20G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRFIBE20G
  • Manufacturer
    Vishay
  • Description
    800 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    650 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    38 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220 FULLPAK

Technical Documents

Latest MOSFETs

View more products