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Si1012CR

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Si1012CR Image

The Si1012CR from Vishay is a MOSFET with Continous Drain Current 0.63 A, Drain Source Resistance 330 to 1100 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for Si1012CR can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1012CR
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.63 A
  • Drain Source Resistance
    330 to 1100 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    0.75 to 2 nC
  • Power Dissipation
    0.24 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC75A
  • Applications
    Load/Power Switching for Portable Devices, Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Battery Operated Systems, Power Supply Converter Circuits

Technical Documents
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