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Si1022R

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Si1022R Image

The Si1022R from Vishay is a MOSFET with Continous Drain Current 0.33 A, Drain Source Resistance 1250 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for Si1022R can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1022R
  • Manufacturer
    Vishay
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.33 A
  • Drain Source Resistance
    1250 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.6 nC
  • Power Dissipation
    0.25 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC75A
  • Applications
    Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc, Battery Operated Systems, Power Supply Converter Circuits, Solid-State Relays

Technical Documents
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