Si1029X

Note : Your request will be directed to Vishay.

Si1029X Image

The Si1029X from Vishay is a MOSFET with Continous Drain Current 0.33 A, Drain Source Resistance 1250 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to 2.5 V. Tags: Surface Mount. More details for Si1029X can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    Si1029X
  • Manufacturer
    Vishay
  • Description
    60 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.33 A
  • Drain Source Resistance
    1250 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to 2.5 V
  • Gate Charge
    0.75 to 1.7 nC
  • Power Dissipation
    0.25 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC89-6
  • Applications
    Replace Digital Transistor, Level-Shifter, Battery Operated Systems, Power Supply Converter Circuits

Technical Documents

Latest MOSFETs

View more products