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Si1062X

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Si1062X Image

The Si1062X from Vishay is a MOSFET with Continous Drain Current 0.53 A, Drain Source Resistance 350 to 762 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for Si1062X can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1062X
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.53 A
  • Drain Source Resistance
    350 to 762 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    1 to 2.7 nC
  • Power Dissipation
    0.22 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-89
  • Applications
    Load / power switching for portable devices, Drivers: relays, solenoids, lamps, hammers, displays, memories, Battery operated systems, Power supply converter circuits

Technical Documents
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