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Si1411DH

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Si1411DH Image

The Si1411DH from Vishay is a MOSFET with Continous Drain Current -0.42 A, Drain Source Resistance 2600 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -4.5 V. Tags: Surface Mount. More details for Si1411DH can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1411DH
  • Manufacturer
    Vishay
  • Description
    150 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.42 A
  • Drain Source Resistance
    2600 milliohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -4.5 V
  • Gate Charge
    4.2 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-70
  • Applications
    Active clamp circuits in DC/DC power supplies

Technical Documents
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