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Si1902CDL

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Si1902CDL Image

The Si1902CDL from Vishay is a MOSFET with Continous Drain Current 1.1 A, Drain Source Resistance 195 to 306 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for Si1902CDL can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1902CDL
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.1 A
  • Drain Source Resistance
    195 to 306 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    0.9 nC
  • Power Dissipation
    0.42 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-70
  • Applications
    Load switch and DC/DC converter for portable devices, High speed switching

Technical Documents
View details on the manufacturer's website
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