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Si1922EDH

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Si1922EDH Image

The Si1922EDH from Vishay is a MOSFET with Continous Drain Current 1.3 A, Drain Source Resistance 165 to 263 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for Si1922EDH can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1922EDH
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.3 A
  • Drain Source Resistance
    165 to 263 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    0.9 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC70-6
  • Applications
    Load Switch for Portable Applications

Technical Documents
View details on the manufacturer's website
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