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Si1965DH

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The Si1965DH from Vishay is a MOSFET with Continous Drain Current 1.3 A, Drain Source Resistance 315 to 710 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for Si1965DH can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1965DH
  • Manufacturer
    Vishay
  • Description
    12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.3 A
  • Drain Source Resistance
    315 to 710 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Gate Charge
    1.7 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC70-6
  • Applications
    Load Switch for Portable Devices

Technical Documents
View details on the manufacturer's website
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