Si2319DDS

Note : Your request will be directed to Vishay.

Si2319DDS Image

The Si2319DDS from Vishay is a MOSFET with Continous Drain Current -3.6 A, Drain Source Resistance 62 to 100 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -2.5 V. Tags: Surface Mount. More details for Si2319DDS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    Si2319DDS
  • Manufacturer
    Vishay
  • Description
    40 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.6 A
  • Drain Source Resistance
    62 to 100 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -2.5 V
  • Gate Charge
    6 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Battery switch, Motor drive control, Load switch

Technical Documents

Latest MOSFETs

View more products