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Si2337DS

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Si2337DS Image

The Si2337DS from Vishay is a MOSFET with Continous Drain Current -2.2 A, Drain Source Resistance 216 to 303 milliohm, Drain Source Breakdown Voltage -80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -4 V. Tags: Surface Mount. More details for Si2337DS can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si2337DS
  • Manufacturer
    Vishay
  • Description
    80 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.2 A
  • Drain Source Resistance
    216 to 303 milliohm
  • Drain Source Breakdown Voltage
    -80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -4 V
  • Gate Charge
    7 to 17 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23

Technical Documents
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