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Si2356DS

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Si2356DS Image

The Si2356DS from Vishay is a MOSFET with Continous Drain Current 4.3 A, Drain Source Resistance 42 to 70 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for Si2356DS can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si2356DS
  • Manufacturer
    Vishay
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.3 A
  • Drain Source Resistance
    42 to 70 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    3.8 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    DC/DC Converter, Load Switch, LED Backlighting, Power Management

Technical Documents
View details on the manufacturer's website
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