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Si2365EDS

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The Si2365EDS from Vishay is a MOSFET with Continous Drain Current -5.9 A, Drain Source Resistance 26.5 to 67.5 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for Si2365EDS can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si2365EDS
  • Manufacturer
    Vishay
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.9 A
  • Drain Source Resistance
    26.5 to 67.5 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Gate Charge
    13.8 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Management for Portable and Consumer - Load Switches - DC/DC Converters

Technical Documents
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