1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. Si2367DS

Si2367DS

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

Si2367DS Image

The Si2367DS from Vishay is a MOSFET with Continous Drain Current -3.8 A, Drain Source Resistance 55 to 130 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for Si2367DS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    Si2367DS
  • Manufacturer
    Vishay
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.8 A
  • Drain Source Resistance
    55 to 130 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Gate Charge
    9 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load switch for portable devices, DC/DC converter

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products