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Si2369BDS

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The Si2369BDS from Vishay is a MOSFET with Continous Drain Current -7.5 A, Drain Source Resistance 22.5 to 39 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -2.2 V. Tags: Surface Mount. More details for Si2369BDS can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si2369BDS
  • Manufacturer
    Vishay
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -7.5 A
  • Drain Source Resistance
    22.5 to 39 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -2.2 V
  • Gate Charge
    6.2 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load switch, Circuit protection, Motor drive control

Technical Documents
View details on the manufacturer's website
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