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Si2369DS

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The Si2369DS from Vishay is a MOSFET with Continous Drain Current -7.6 A, Drain Source Resistance 24 to 40 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for Si2369DS can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si2369DS
  • Manufacturer
    Vishay
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -7.6 A
  • Drain Source Resistance
    24 to 40 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    11.4 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    For mobile computing - Load switch - Notebook adaptor switch - DC/DC converter

Technical Documents
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