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Si3410DV

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Si3410DV Image

The Si3410DV from Vishay is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 16 to 23 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for Si3410DV can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si3410DV
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    16 to 23 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    9.2 nC
  • Power Dissipation
    4.1 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Notebook Load Switch, Low Current dc-to-dc

Technical Documents
View details on the manufacturer's website
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