1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. Si3430DV

Si3430DV

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

Si3430DV Image

The Si3430DV from Vishay is a MOSFET with Continous Drain Current 1.8 A, Drain Source Resistance 148 to 185 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4.2 V. Tags: Surface Mount. More details for Si3430DV can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    Si3430DV
  • Manufacturer
    Vishay
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.8 A
  • Drain Source Resistance
    148 to 185 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4.2 V
  • Gate Charge
    5.5 to 8.2 nC
  • Power Dissipation
    1.14 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products