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Si3459BDV

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Si3459BDV Image

The Si3459BDV from Vishay is a MOSFET with Continous Drain Current -2.9 A, Drain Source Resistance 180 to 288 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Surface Mount. More details for Si3459BDV can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si3459BDV
  • Manufacturer
    Vishay
  • Description
    60 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.9 A
  • Drain Source Resistance
    180 to 288 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    4.4 nC
  • Power Dissipation
    3.3 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Load switch

Technical Documents
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