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Si3460DDV

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Si3460DDV Image

The Si3460DDV from Vishay is a MOSFET with Continous Drain Current 7.9 A, Drain Source Resistance 23 to 38 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for Si3460DDV can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si3460DDV
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.9 A
  • Drain Source Resistance
    23 to 38 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    6.7 nC
  • Power Dissipation
    2.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    DC/DC Converters, Boost Converters, Load Switch

Technical Documents
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