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Si3585CDV

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The Si3585CDV from Vishay is a MOSFET with Continous Drain Current 2.1 A, Drain Source Resistance 48 to 316 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -20 to 20 V. Tags: Surface Mount. More details for Si3585CDV can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si3585CDV
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.1 A
  • Drain Source Resistance
    48 to 316 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -20 to 20 V
  • Gate Charge
    2.9 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Load Switch for Portable Devices, DC/DC Converters, Drivers: Motor, Solenoid, Relay

Technical Documents
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