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Si3590DV

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Si3590DV Image

The Si3590DV from Vishay is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 62 to 300 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.6 to -1.5 V. Tags: Surface Mount. More details for Si3590DV can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si3590DV
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    62 to 300 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.6 to -1.5 V
  • Gate Charge
    3 nC
  • Power Dissipation
    1.15 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Portable devices including PDAs, cellular phones, and pagers

Technical Documents
View details on the manufacturer's website
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