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Si4101DY

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Si4101DY Image

The Si4101DY from Vishay is a MOSFET with Continous Drain Current 25.7 A, Drain Source Resistance 5 to 8 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -2.5 V. Tags: Surface Mount. More details for Si4101DY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4101DY
  • Manufacturer
    Vishay
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25.7 A
  • Drain Source Resistance
    5 to 8 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -2.5 V
  • Gate Charge
    135 nC
  • Power Dissipation
    6 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Adaptor Switch, Load Switch, Power Management, Notebook Computers and Portable Battery Packs

Technical Documents
View details on the manufacturer's website
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