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Si4166DY

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Si4166DY Image

The Si4166DY from Vishay is a MOSFET with Continous Drain Current 30.5 A, Drain Source Resistance 3.2 to 5.5 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2. V. Tags: Surface Mount. More details for Si4166DY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4166DY
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30.5 A
  • Drain Source Resistance
    3.2 to 5.5 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2. V
  • Gate Charge
    42.5 nC
  • Power Dissipation
    6.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Low-Side DC/DC Conversion - Notebook PC - Gaming

Technical Documents
View details on the manufacturer's website
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