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Si4190ADY

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The Si4190ADY from Vishay is a MOSFET with Continous Drain Current 18.4 A, Drain Source Resistance 7.3 to 12 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.8 V. Tags: Surface Mount. More details for Si4190ADY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4190ADY
  • Manufacturer
    Vishay
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18.4 A
  • Drain Source Resistance
    7.3 to 12 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.8 V
  • Gate Charge
    44.4 nC
  • Power Dissipation
    6 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    DC/DC primary side switch, Telecom/server, Industrial

Technical Documents
View details on the manufacturer's website
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