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Si4459BDY

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Si4459BDY Image

The Si4459BDY from Vishay is a MOSFET with Continous Drain Current -27.8 A, Drain Source Resistance 4.1 to 8.2 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 16 V, Gate Source Threshold Voltage -1 to -2.2 V. Tags: Surface Mount. More details for Si4459BDY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4459BDY
  • Manufacturer
    Vishay
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -27.8 A
  • Drain Source Resistance
    4.1 to 8.2 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 16 V
  • Gate Source Threshold Voltage
    -1 to -2.2 V
  • Gate Charge
    56 nC
  • Power Dissipation
    5.6 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Battery management in mobile devices, Adapter and charger switch, Battery switch, Load switch

Technical Documents
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