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Si4463CDY

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The Si4463CDY from Vishay is a MOSFET with Continous Drain Current -18.6 A, Drain Source Resistance 6 to 14 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.6 to -1.4 V. Tags: Surface Mount. More details for Si4463CDY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4463CDY
  • Manufacturer
    Vishay
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -18.6 A
  • Drain Source Resistance
    6 to 14 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.6 to -1.4 V
  • Gate Charge
    108 nC
  • Power Dissipation
    5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Adaptor switch, High current load switch, Notebook

Technical Documents
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